即決 J310パラレル 1～30MHz HF帯広帯域 プリアンプキット ゲート接地 受信アンプ 短波帯用 J-FET 2sk125と同等の性能 即決 1,600円 送料無料.

J310 Datasheet, J310 PDF, J310 Data sheet, J310 manual, J310 pdf, J310, datenblatt, Electronics J310, alldatasheet, free, datasheet, Datasheets, data sheet, datas. ジャンル: 品名・品番: 在庫数: 単価1個: 単価10個以上: ダイオード: 1n60p: 1886個: 10円: 7円: 1n4148: 53個: 8円: 4円: 1s1555: 1832個: 20. Description J310, N-channel JFET VHF / UHF amplifier, 25v 10mA, commonly used in RF amplifier and oscillator circuits up to 500MHz. TO92 Package, For more information refer to the J310 Data Sheet WE MAY LIMIT QUANTITIES AS THIS PRODUCT HAS BEEN DISCONTINUED BY MAJOR MANUFACTURERS. Adaptation to the circuit: the circuit also works properly when you disconnect the backcoupling coil (L1) and connect the 1K5 source resistor directy to grou.

Type Designator: J309

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.625 W

Maximum Drain-Source Voltage |Vds|: 25 V

J310 Transistor

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-92

J309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J309 Datasheet (PDF)

0.1. mmbfj309 mmbfj310.pdf Size:165K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1N Channel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATING

0.2. pmbfj308 pmbfj309 pmbfj310 2.pdf Size:68K _philips

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE

0.3. j308-j309-j310.pdf Size:96K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ308; J309; J310N-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J308; J309; J310FEATURES PINNING - TO-92 Low noisePIN SYMBOL DESCRIPTION Interchangea

0.4. j309 j310 mmbfj309 mmbfj310.pdf Size:207K _fairchild_semi

December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309

0.5. j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf Size:96K _vishay

J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

0.6. j309g j310g.pdf Size:66K _onsemi

J309, J310Preferred Device JFET VHF/UHF AmplifiersN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEGate -Source Voltage VGS 25 VdcForward Gate Current IGF 10 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/

0.7. mmbfj309lt1 mmbfj310lt1.pdf Size:144K _onsemi

MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31

0.8. j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf Size:98K _siliconix

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

Datasheet: MMBF5460, MMBF5461, MMBF5462, MMBF5484, MMBF5485, MMBF5486, MMBFJ270, MMBFJ271, J310, MMBFJ309, MMBFJ310, MPF102, P1086, P1087, STP11NB40, STP11NB40FP, STP9NB50.

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Atlas -210x/215x POST MIXER AMPLIFIER

6-jul-2014. A third simpler design for a post mixer amp & spectruanalyzer image of input SWR & image.

Current saving LED lightning for dial and meter, homemade Alu finger dimple.

POST MIXER AMPLIFIER I

An optimal operation of a double-balanced diode ring mixer can be improved if the IF port is loaded with a non-induction impedance of 50 ohms. This can be achieved with a so-called duplexer (fig»), but also with an amplifier with broadband input impedance of approximately 50 ohms.

I have tested a number of circuits see below:

This J310 FET post mixer amplifier follows the front-end mixer without having to use a diplexer. The design is in fact a buffer between the mixer and the tuned L103. The modification is applicable for all PC-100A to 100D-PC boards. Note the different capacitors and colour of L3's slugs. The data was actually collected from the original boards.

The circuit with a grounded gate provides proper termination to the diode mixer and the input SWR at the source is flat. Too much gain in this set leads to oscillate during transmit, therefore the output is loaded through an attenuator with standard resistors. That improves the flat load for the mixer and a measurement showed SWR ≤ 1.7 from 1.5 to 45 MHz. Unfortunately my test gear was only accurate to about 45 MHz.

Purists will note that a high current FET could be a better choose. Indeed I have tested the amplifier with a vintage P8000 and P8002 FET. However in practice showed no noticeable difference, so I did the mod with the more available J310.

INSTALLATION

Mount the J310 with shorter legs. I used a 4C6 toroid in stead of the FT50-43 type.

The installation (see photo) is not difficult and you need only to cut a track and solder the components. If one are not satisfied with the result or you would for any other reason generate the original circuit, it is sufficient to remove everything and recover the track.

In principle there is nothing to be adjusted after the modification, but optimal results can be achieved by trimming L103 on 15 m for maximum during transmit or receive.

J310 Fet Pinout

PC-100A redrawn with sPlan.

The post mixer amplifier has drawn in the PC100C circuit.

POST MIXER AMPLIFIER II

J310 Fet Transistor

Because I have PC-100A, 100B PC, PC-100C and PC-100D boards, I could not resist my urge to experiment further with PC-100D in my Atlas215x. In the past I replaced the absolete 'P8000 and P8002 with multiple J310 in parallel. The goal was to load the output of L102 as closely as possible with 50 Ohm and not introduce too much amplification in the existing circuit.

It is reasonably well managed with the adjacent circuit and L102's output is matched over a wide range with 50 Ohms and VSWR = 1.3. The system was measured with two different antenna analyzers.

PC-300D drew with the mods.

Note the additional 100 nF capacitor in parallel with electrolytic capacitor C113 (15 uF). I recommend this improved decoupling for all types PC-100 boards.

After much searching I purchased 1N5711 diodes, so the original 1N4148's of the first mixer were replaced.

Are the Altas transceivers got better with the mods? I have not (yet) measure, but the sets are not become worse.

POST MIXER AMPLIFIER III

Later in 2014 during experimentation revealed that J310 FET's of the same batch were rather similar. If they were switched in parallel instead working with their own resting current system (e.g. diagram above), it had no appreciable effect in the circuit.

Initially a low VSWR at the input was obtained with one J310, but with both (fig ») in parallel, the SWR was even better!

The coupling with the following tuned circuit (L103) was not done with a toroid wide band transformer, but with a 10 pF capacitor at the top of L103. As a result post-mixer amplifier and tuned circuit are less loaded and a sharper resonance is obtained. The intersection point of the voltage divider C104/C105 becomes useless. The tuned circuit must be re-adjusted after the application of the modification.

The 1 nF capacitor (C104) is in fact redundant and could be short-circuit. For resonance core L103 should be turned out, but unfortunately it does not go far enough. As an improvement, the combination of C104/C105 could be replaced by a high quality capacitor (in this case, 91 pF).

Note that Atlas hardly update their schematics. Multiple versions of print designs exist and slugs of tuned circuit have different colours. Also associated tuning capacitance's differ. For your information I have drawn all details of my six PC100(A…D) at the schematic (fig»).

A third simpler effective option for a post mixer amplifier.

See my other Atlas-210x/215x articles:

General information

AGC modification

VFO stabilizer

Speech processor

17m modification