The market for gallium nitride (GaN) semiconductors is largely consolidated, with the top four companies taking 65% of the overall market in 2015 says Transparency Market Research (TMR). CoolGaN™ - bringing Gallium Nitride (GaN) technology to the next level GaN has an even higher bandgap (3.4 electronvolt) and substantially higher electron mobility than SiC. Compared to silicon (Si), the breakdown field is ten times higher and the electron mobility is double. CoolGaN™ - bringing Gallium Nitride (GaN) technology to the next level GaN has an even higher bandgap (3.4 electronvolt) and substantially higher electron mobility than SiC. Compared to silicon (Si), the breakdown field is ten times higher and the electron mobility is double. Typical ratings for Rad-Hard devices range from 100 kilo Rads to 300 kilo Rads. In some cases, devices can be made to go up to 1 M Rad, but these tend to be very expensive. Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices EPC Space’s family of enhancement mode gallium nitride FETs and ICs.

Design Philosophy

“The new AGD “THE AUDION” is one of the most Compact Amplifier Design in Hi-End Audio. “THE AUDION” Monoblock uses the unique GaNTube™ technology with Gallium Nitride MOSFET based Power-Stage, fully enclosed in a Glass Tube. The Gallium Nitride Power MOSFETS, are the unique technology design advantage of AGD Productions, and are the key to the reference level performance of all AGD amplifiers. With the seamless ability to drive any load, “THE AUDION” can deliver an unmatched sonic experience that only SET designs have been able to provide so far.

With 170W of power capability, the fastest voltage slew-rate, and with 20,000µF of super audio grade capacitor reservoir, “THE AUDION” is uniquely capable of sustaining the deepest bass punches while delivering the finest harmonic content of any vocal and musical instruments ensemble. Crafted in a minimalistic ultra-compact solid aluminum case, “THE AUDION” has one single ended and one full balanced XLR inputs, (40kOhm std. and 600ohm upon request), enabling a perfect match with any direct source units (DAC) or preamplifiers in the market.

AGD “THE AUDION” Monoblock amplifiers are build around the same output power stage used in the AGD Vivace. To achieve the highest-performance in audio reproduction, AGD “THE AUDION” mono-block employs the same fundamental technology pioneered by the AGD Vivace design. As with the AGD Vivace, also in AGD “THE AUDION” design we were able to achieve nearly ideal switching waveforms, completely oscillation-free

Thus, preserving the harmonic content present in the original input signal and avoid the superimposition of any additional artifacts that alter the overall spectrum and the spatiality of the music reproduction.
The Gallium Nitride power MOSFETS used in the GaNTubeTM power stage, simplifies this challenge through its ability to efficiently switch at much higher slew rates than any silicon based power MOSFET, with almost perfect (book-like) behavior and oscillation free switching.

THE AUDION

THD+N @ 0db output, 4ohm, 1kHz

XLR Input (40kohm input impedance)

THE AUDION

THD+N @ 0db output, 4ohm, 1kHz

RCA Input (40kohm input impedance)

THE AUDION
PWM Frequency waveform at V_S switching point.

THE AUDION
Voltage rise time waveform.

Switching voltage at V_S point ( + 4000V/μs)

THE AUDION
Voltage fall time waveform.

Switching voltage at V_S point (- 4000V/μs)

The AUDION Tube 1906
(Triode from 1918)

Lee de Forest’s triode tube (Audion) from 1906.

• Top metal electrode is the plate.
• Grid is the bent metal wire partly visible.

AGD “THE AUDION” 2021

• The most advanced power stage in Hi-End Audio.
• Gallium Nitride MOSFET based power stage.
• Fully integrated in a Glass Tube (Octal Socket)
• 170W, 4ohm (>30A max current capability).
• 800KHz PWM (GaNTubeKT88 MKII)
• 40kOhm input impedance.
• <-130db noise floor.

Gallery

The AGD Vivace Monoblock, is the most advanced Hi-End Power Amplifier in the market.First to use the unique GaNTube™ technology with Gallium Nitride Power-Stage integrated in a Vacuum Tube. The Gallium nitride components are the key to the reference level performance of the AGD Vivace Monoblocks.
To achieve the highest-performance in audio reproduction, switching topologies must achieve nearly ideal switching waveforms, completely oscillation-free, to minimize distortion but most importantly, to preserve the harmonic content present in the original input signal and avoid the superimposition of any additional artifacts that alter the overall spectrum and the spatiality of the music reproduction.The Gallium Nitride power MOSFETS used in the GaNTubeTM power stage, simplifies this challenge through its ability to efficiently switch at much higher slew rates than any silicon based power MOSFET, with almost perfect (book-like) behavior and oscillation free switching.

Gallium Nitride Suppliers

Design Philosophy

With the seamless ability to drive any loudspeakers, 200W of power, 48,000µF of super audio grade capacitor reservoir, and the fastest slew-rate, the GaNTube™ Technology delivers the purest sonic experience.
Thanks to the Gallium-Nitride power stage intrinsic characteristics, the virtually stray-inductance free package, and a state of the art layout of the power module, the rise time and fall time of the Vivace's GaNTubeTM power stage are fully symmetrical at ~15ns. The output waveform at the switching node of the Gallium-Nitride power stage (pre-LC filter) is completely oscillation free even with a slew rate of 3700V/µs!

This oscilloscope snap-shot of the output power stage half-bridge switching node, is a dramatic evidence of the tremendous difference in switching speed between the Gallium Nitride Power MOSFET and the state of the art Silicon Power MOSFET equivalent.

The combination of low noise design technique implemented and the best practice for the internal board layout, the RF quality BNC connectors for the analog signals, are the key contributors of the excellent noise floor of the Vivace Monoblocks and extremely low distortion.

Gallium Nitride Vs Mosfet

Main Features & Characteristics:

• Single Channel Class-D Amplifier
• Fully integrated in Vacuum Tube Enclosure
• Gallium Nitride MOSFET Power Stage
• IRS20957 Controller PWM IC
• Up to 200W 4Ω
• Up to 768KHz PWM.
• ≥ 94% Efficiency
• ≤ -120db
• OVT, OVC and DC protection

AGD Vivace GaN

The amps can be feed balanced or through RCA-inputs. An input selector, toogles the signal input feed from the connectors to the analog board. The power inlet is high-grade quality with medical standard EMI filter and with voltage selector for operation Speaker terminals are simply made, effective and can handle cables of large cross sections.

Technical Specs

PARAMETERS
• Nominal Output Power at 0.01% THD+N, 20Hz÷20KHz, 8Ω
• THD+N 10W/1KHz
• Maximum Output Power at 0.1% THD+N, 1KHz, , 4Ω
• Bandwidth ±3dB
• Efficiency%
• Output Noise (A-weighted)
• PWM Frequency
• Dynamic Range
• Dimension
• Weight
• Input Voltage

Gan Power Mosfet

GaNTube^TM
• 100W
• <0.005%
• 200W
• 5Hz÷100KHz
• >94%
• ≤ 45μV
• Up to 768KHz
• 120dB
• 11'x11'x5' (279x279x127mm)
• 22lbs (10kg)
• 110-240V (user selectable)

Gan Power Transistor